STT-MRAM failed address bypass circuit and STT-MRAM device including same

ABSTRACT

A spin transfer torque magnetic random access memory (STT-MRAM) device according to the present embodiment comprises: an STT-MRAM memory array which includes a data storage unit for storing data, a defect area address storage unit for storing an address of a defect area, and a spare area for storing data of a failed area; and a bypass determination unit which includes a volatile information storage element for storing the address of the defect area, stored in the defect area address storage unit and provided thereto, and when memory array access occurs, compares an access address with the address of the defect area stored in the volatile information storage element and causes the memory array access to bypass to the spare area.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a National Stage of International Application No.PCT/KR2018/003067 filed Mar. 16, 2018, claiming priority based on KoreanPatent Application No. 10-2017-0033701 filed Mar. 17, 2017.

TECHNICAL FIELD

The present invention relates to a circuit for bypassing a defect areaof a spin transfer torque-magnetic random access memory (STT-MRAM) andan STT-MRAM device including the circuit.

BACKGROUND ART

Among semiconductor memories, dynamic random access memories (DRAMs)currently occupy the largest portion. However, DRAMs have a problem withscaling down and the resulting problem of maintaining the capacitance ofa capacitor for storing information. To overcome these limitations, newforms of devices have been developed. A next-generation device whichattracts the most attention is a magnetic random access memory (MRAM)based on tunneling magnetoresistance.

The MRAM is a non-volatile device which takes advantage of a change inmagnetic resistance caused by the arrangement of two ferromagneticlayers constituting a magnetic tunnel junction (MTJ), which is basicallycomposed of a laminated structure of a ferromagnetic layer, aninsulating layer, and a ferromagnetic layer. One of the twoferromagnetic layers is a pinned layer (PL) having a fixed magnetizationdirection, and the other is a free layer (FL) having a magnetizationdirection which is changed by a current flowing therethrough.

When electrons passing through the first ferromagnetic layer passthrough the insulating layer used as a tunneling barrier, a tunnelingprobability varies according to the magnetization direction of thesecond ferromagnetic layer. In other words, when the magnetizationdirections of the two ferromagnetic layers are parallel to each other, atunneling current is maximized, and when the magnetization directionsare antiparallel, the tunneling current is minimized. Therefore, it ispossible to read stored data on the basis of a difference in current ofeach case.

The MRAM generally uses the spin transfer torque (STT) phenomenon towrite data therein. The STT phenomenon refers to the phenomenon where achange in angular momentum is instantaneously caused when aspin-polarized current goes through a ferromagnetic body. In otherwords, data is written using the phenomenon where the magnetizationdirection of a ferromagnetic body is aligned in the spin direction of ahigh-density current having a polarized spin direction unless themagnetization direction of the ferromagnetic body does not coincide withthe spin direction of the current when the current flows into theferromagnetic body.

In an MTJ used in a semiconductor memory, when electrons of a current ofa threshold or higher flow from a PL to an FL, the magnetizationdirection of the FL becomes identical to the magnetization direction ofthe PL due to the flow of electrons whose spin directions are aligned inthe magnetization direction of the PL. On the contrary, when electronsof a current of the threshold or higher flow from the FL to the PL, spinaccumulation occurs in the interface between the PL and the FL, and themagnetization direction of the FL becomes antiparallel to that of thePL. Therefore, it is possible to record data using the magnetizationdirection of the FL.

DISCLOSURE Technical Problem

When a magnetic random access memory (MRAM) device is formed of anintegrated high-density array, a defect may occur in device readingand/or writing for several reasons. In devices such as a conventionaldynamic random access memory (DRAM), there are circuits for bypassing amemory area at which a defect has occurred and taking a detour toanother area when an attempt is made to access the address.

Conventional devices store an address of an area at which a defect hasoccurred in a fuse or an electrically erasable programmable read-onlymemory (EEPROM) which is a non-volatile memory. In the case of storingan address of an area at which a defect has occurred in a fuse, it isdifficult to handle a defect which is newly detected when memorypackaging is finished after initial operation. In the case of storing anaddress of an area at which a defect has occurred in an EEPROM, it isnecessary to generate a high voltage by additionally forming a circuit,which is uneconomical in terms of die size and power consumption.

The present invention is directed to providing a MRAM device whichsolves the above-described problems of the conventional art and providesunique technical effects that the conventional art does not have.

Technical Solution

One aspect of the present invention provides a spin transfer torquemagnetic random access memory (STT-MRAM) device including: an STT-MRAMmemory array including a data storage unit for storing data, a defectarea address storage unit for storing a defect area address, and a sparearea for storing data of a defect area; and a bypass determination unitincluding a volatile information storage element for storing the defectarea address, which is stored in the defect area address storage unitand provided, and configured to compare, when memory array accessoccurs, an access address with the defect area address stored in thevolatile information storage element and cause the memory array accessto take a detour to the spare area.

Another aspect of the present invention provides a circuit for bypassinga defect area of an STT-MRAM, the circuit including address storagecapacitors configured to store respective bits of a defect area address,address comparison units having one end to which one bit of an accessaddress is provided and the other end to which one bit stored in theaddress capacitor is provided and configured to perform an addresscomparison logic operation, and an address coincidence logic operationunit configured to receive output signals of the address comparisonunits and determine whether the access address coincides with the defectarea address. When the access address coincides with the defect areaaddress, the address coincidence logic operation unit activates a sparearea and causes access to the defect area address to take a detour tothe activated spare area.

Advantageous Effects

According to the present embodiment, since the address of a defect areais stored in an information storage element in a memory array, it isunnecessary to form an additional component. Also, since it isunnecessary to form an additional power providing circuit required foroperation, it is economical in terms of die size and power consumption.

DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram showing an overview of a spin transfer torquemagnetic random access memory (STT-MRAM) device according to the presentembodiment.

FIGS. 2A and 2B are a set of schematic circuit diagrams of a bypassdetermination unit according to the present embodiment.

FIG. 3 is a timing diagram showing operation of the STT-MRAM deviceaccording to the present embodiment.

MODES OF THE INVENTION

A subscript may be added to reference symbols of components whichperform identical or similar functions. However, when it is unnecessaryto distinguish between the components, the components may becollectively indicated by a symbol excluding the subscript, and when itis necessary to distinguish between the components, the subscript may beadded for description.

Elements, such as a switch, included in the drawings which are appendedand described herein show elements that are turned on or activated by ahigh-state signal as examples. However, this is for the purpose offacilitating description and not for limiting the scope of the presentinvention. Therefore, an N-type metal oxide semiconductor field effecttransistor (MOSFET) can be replaced by a P-type MOSFET, which is easilyunderstood by those of ordinary skill in the art.

Hereinafter, a spin transfer torque magnetic random access memory(STT-MRAM) device 10 and a circuit 200 for bypassing a defect area of anSTT-MRAM according to the present embodiment will be described withreference to the accompanying drawings. FIG. 1 is a block diagramshowing an overview of an STT-MRAM device 10 according to the presentembodiment. Referring to FIG. 1, the STT-MRAM device 10 according to thepresent embodiment includes an STT-MRAM memory array 100 including adata storage unit 110 for storing data, a defect area address storageunit 120 for storing a defect area address, and a spare area for storingdata of a defect area, and a bypass determination unit 200 includingvolatile information storage elements CA for storing the defect areaaddress, which is stored in the defect area address storage unit 120 andprovided, and configured to compare a memory array access address withthe defect area address stored in the volatile information storageelement and cause memory array access to take a detour to the sparearea.

The circuit 200 for bypassing a defect area of an STT-MRAM according tothe present embodiment includes the address storage capacitors CAconfigured to store respective bits of a defect area address, addresscomparison units 210 having one end to which one bit of an accessaddress A is provided and the other end to which one bit stored in theaddress storage capacitors CA is provided and configured to perform anaddress comparison logic operation, and an address coincidence logicoperation unit 220 configured to receive output signals of the addresscomparison units and determine whether the access address coincides withthe defect area address. When the access address coincides with thedefect area address, the address coincidence logic operation unit 220activates a spare area and causes access to the defect area address totake a detour to the activated spare area.

Referring to FIG. 1, the STT-MRAM device 10 according to the presentembodiment may include a plurality of memory arrays 100 ₀, . . . , and100 _(k-1). The memory array 100 includes the data storage unit 110 forstoring data.

The data storage unit 110 includes storage elements U disposed in anarray to read or write one logic bit. In the embodiment shown as anexample in FIG. 1, the storage elements U may have a 2-transistor2-magnetic tunnel junction (MTJ) (2T2M) structure in which two bitswhich are complementary to each other are stored in order to storeinformation of any one bit. According to the 2T2M structure, pieces ofdata complementary to each other may be stored in two MTJs in order tostore any one bit, and information of the stored one bit may be read onthe basis of a difference between the complementary pieces ofinformation stored in the two MTJs. In the storage elements U having the2T2M structure, since two bits complementary to each other are used, itis possible to improve a sensing margin thereof.

According to an embodiment not shown in the drawings, the data storageunit 110 may include a storage element having a 1T1M structure in whichone transistor and one MTJ are used to read or write any one logic bit.According to this embodiment, it is possible to increase data storagedensity.

The 2T2M structure and 1T1M structure have been taken as examples above.However, the present embodiment is not limited to the structures and mayuse various structures of unit storage elements which have not beentaken as examples.

The defect area address storage unit 120 stores an address of a defectarea in the memory array 100. In an embodiment, the defect area mayindicate a row, a column, etc. including a storage element in which itis not possible to read or write target data. In FIG. 1, the defect areaaddress storage unit 120 is shown as storage elements included in onerow connected to a word line WLr. According to an embodiment not shownin the drawings, however, the defect area address storage unit 120 mayinclude storage elements included in a plurality of rows connected to aplurality of word lines.

For example, after a manufacturing process of the STT-MRAM device 10 isfinished, a defect area may be detected in a test process of performingwriting and reading. An address of the detected defect area may bestored in the defect area address storage unit 120 in the test process.

According to an embodiment, the defect area address storage unit 120 mayfurther store an activation flag bit. The storage elements included inthe defect area address storage unit 120 store the address of the defectarea detected in the test. Before the address of the defect area isstored, random bits may be stored in the defect area address storageunit 120, and the random bits may coincide with an address of an areawhich operates normally. The activation flag bit prevents malfunctioncaused when an address randomly stored in the defect area addressstorage unit 120 coincides with an address to be accessed. Theactivation flag bit indicates that an address stored in the defect areaaddress storage unit 120 is the address of the defect area detected andwritten therein and may be written as a logic high or a logic low. As anexample, the activation flag bit may be a single bit. As anotherexample, the activation flag bit may be a plurality of bits.

The spare area (not shown) is an area for storing data to be written inthe defect area and may be included in the memory array 100 togetherwith the data storage unit 110. As will be described below, the sparearea may be activated by an activation signal SRE provided by the bypassdetermination unit 200. In an embodiment, the spare area may store datain the same structure in which the data storage unit 110 stores data.

A read/write (R/W) driver 400 reads or writes information by providingan electrical signal to the storage elements U included in the datastorage unit 110. In the process of the driver 400 reading information,a voltage formed by providing an electrical signal to the storageelements U is read by a sense amplifier 300.

The sense amplifier 300 provides a read result as corresponding outputsOUT and OUTB. In an embodiment, the sense amplifier 300 may latch up theprovided signal with a signal SE and output the latched signal.

In FIG. 1, the STT-MRAM device 10 is shown to include one senseamplifier 300. According to an embodiment not shown in the drawings, aplurality of sense amplifiers may be included. When a plurality of senseamplifiers are formed and allocated to respective columns of the memoryarray, it is possible to increase speed.

In the embodiment shown as an example in FIG. 1, when the driver 400writes data in the storage elements U included in the data storage unit110, a control unit (not shown) provides a signal to a word line WL₀connected to a transistor connected to a target storage element U andturns on switches CL₀ connected to a global bit line GBL and a globalsource line GSL. The driver 400 changes a magnetization direction of afree layer (FL) of an MTJ, which is a storage element, by applying acurrent from a pinned layer (PL) (←) of the MTJ to the FL (↔) orapplying a current from the FL (↔) to the PL (←) and thereby may writetarget information.

In the embodiment shown as an example in FIG. 1, when the driver 400reads data from a storage element included in the data storage unit 110,the control unit (not shown) provides a signal to a word line WL₀connected to a transistor connected to a target storage element U andconnects the global bit line GBL and the sense amplifier 300 by turningon the switches CL₀ connected to the global bit line GBL and the globalsource line and a switch RE. The driver 400 provides a voltage in anyone direction of the storage elements U.

When a magnetization direction of the FL (↔) coincides with amagnetization direction of the PL (←), a resistance value of the MTJ issmaller than that of a case in which the magnetization direction of theFL (↔) differs from the magnetization direction of the PL (←).Therefore, the sense amplifier may detect information stored in thestorage element by sensing the change. However, the above-describedprocess is only an example of operations, and operations may beperformed in another sequence.

Operation of the bypass determination unit 200 will be described belowwith reference to FIGS. 1 to 3. FIGS. 2A and 2B are a set of schematiccircuit diagrams of the bypass determination unit 200 according to thepresent embodiment. Referring to FIGS. 1, 2A, and 2B, when the STT-MRAMdevice 10 is booted up or reset, the control unit (not shown) turns onthe respective switches by providing a signal to the global bit line(GBL), the global source line (GSL), and the word line WL_(T) connectedto the storage elements of the defect area address storage unit 120, andthe driver 400 provides an electrical signal to the storage elementsincluded in the defect area address storage unit 120. The control unit(not shown) turns on the switch RE so that the sense amplifier 300 maydetect information stored in the defect area address storage unit 120.

The control unit controls a switch RL so that respective bits ofinformation output by the sense amplifier 300 may be stored in theaddress information storage capacitors CA. Also, the control unit storesan activation flag bit, which is included in the defect area addressstorage unit 120, in an activation capacitor CB. In the embodiment shownin the drawing, when there is a single activation flag bit, theactivation capacitor CB may be one capacitor. In another embodiment notshown in the drawings, when there are a plurality of activation flagbits, the activation capacitor CB may be a plurality of capacitors.

The address information storage capacitors CA and the activationcapacitor CB included in the STT-MRAM device 10 may be actual capacitorsthat may have a non-ideal characteristic such as charge leakage. Toprevent information loss caused by the unideal characteristic, theaddress information storage capacitors CA and the activation capacitorCB may be refreshed. As an embodiment, the control unit may perform therefresh by reading an address stored in the defect area address storageunit 120 and the activation flag bit and storing the address and theactivation flag bit respectively in the address information storagecapacitors CA and the activation capacitor CB. As another embodiment,the bypass determination unit may further include a refresh unit forrefreshing information stored in the address information storagecapacitors CA and the activation capacitor CB.

The bypass determination unit 200 includes the address comparison units210 to which one bit of the access address A is provided as one inputand a bit stored in the address storage capacitors CA is provided asanother input. In an embodiment, when the bit A₀ of the access addresscoincides with the bit stored in the address information storagecapacitor CA₀, the address comparison unit 210 outputs an activationsignal E₀.

In the embodiment shown as an example in FIG. 2A, the address comparisonunits 210 may include an exclusive NOR gate which receives one bit ofthe access address as one input and a bit stored in an address storagecapacitor as another input and provides the activation signal E in alogic high state when the two bits coincide with each other.

The address coincidence logic operation unit 220 provides the spare areaactivation signal SRE in a high state when activation signals E providedby the address comparison units 210 and activation flag bits are all inlogic high states.

In the embodiment shown as an example in FIG. 2A, when the STT-MRAMdevice 10 is booted up or reset, a WLrB signal which is obtained byinverting a WLr signal provided to a word line of the defect areaaddress storage unit 120 in the case of reading a defect area addressstored in the defect area address storage unit 120 may be provided tothe address coincidence logic operation unit 220. The WLr signal isprovided in a logic high state in the case of storing an address of adefect area in the defect area address storage unit 120 or reading adefect area address stored in the defect area address storage unit 120when the STT-MRAM device 10 is booted up or reset.

In the case of reading a defect area address stored in the defect areaaddress storage unit 120 when the STT-MRAM device 10 is booted up orreset, the WLr signal is a logic high, and the WLrB signal is a logiclow. Therefore, the bypass determination unit 200 may be deactivated.

However, in the process of comparing the address A provided for memoryaccess with the defect area address, the WLrB signal is maintained in alogic high state. Therefore, the bypass determination unit 200 mayprovide the spare area activation signal SRE according to a comparisonresult between the access address A and an address stored in thecapacitors.

In the embodiment shown as an example in FIG. 2B, the address comparisonunits 210 may be exclusive OR gates which provide the activation signalE in a logic low state when the bit of an access address coincides withthe bit stored in the address information storage capacitor CA.

When the activation signal E is provided in a logic low state, theaddress coincidence logic operation unit 220 may be implemented as a NORgate. For example, when activation signals E provided by the addresscomparison units 210 and activation flag bits are all in a logic lowstate, the address coincidence logic operation unit 220 may provide thespare area activation signal SRE for activating the spare area in a highstate.

The address coincidence logic operation unit 220 may further include anAND gate, to which a WLrB signal obtained by inverting a WLr signalprovided to a word line of the defect area address storage unit 120 maybe provided when the STT-MRAM device 10 is booted up or reset. Since theWLrB signal is the same as the WLrB signal in the previous embodiment,description thereof is omitted.

FIGS. 2A and 2B are only examples, and those of ordinary skill in theart can easily derive a configuration for performing the same or similarfunction from the above-described embodiments.

The spare area (not shown) is activated by the spare area activationsignal SRE. When the spare area is activated by the spare areaactivation signal SRE, the data storage unit 110 is deactivated toprevent access to a defect area included in the data storage 110.Therefore, the bypass determination unit 200 may prevent memory accessto the defect area and cause the memory access to take a detour to thespare area.

Simulation Example

FIG. 3 is a timing diagram showing operation of the STT-MRAM device 10according to the present embodiment. Referring to FIG. 3, the STT-MRAMdevice 10 according to the present embodiment may operate in a firstphase P1 for storing an address in the address storage capacitors CA orin a second phase P2 for comparing an address requested for memoryaccess with the defect area address stored in the address storagecapacitors CA. Although not shown in the timing diagram, a process ofstoring an activation flag bit in the defect area address storage unit120 to the activation capacitor CB may be further performed in the firstphase P1.

It is assumed that an address of a defect area is [10] as a test resultof the STT-MRAM device 10 and [10] is stored in the defect area addressstorage unit 120.

In the first phase P1, an activation signal is provided to the word lineWLr connected to the defect area address storage unit 120, and theswitches CL0 connected to the global bit line GBL and the global sourceline GSL are turned on. Subsequently, a signal RE is provided to provideinformation stored in a defect area address storage element to the senseamplifier 300, and the sense amplifier receives a signal SE and latchesup and outputs the provided information

The corresponding information is stored by a signal RL0 in the addressstorage capacitor CA0. Through a like process, the information stored inthe second defect area address storage element is stored in the addressstorage capacitor CA1 by turning on the switch CL1. Therefore, [10] isstored in each of the address storage capacitors CA0 and CAL Also, anactivation flag bit is stored in the activation capacitor CB.

In the second phase P2 proceeding in succession, when the memory accessaddress [10] is provided to A0 and A1, the bypass determination unitoutputs the spare area activation signal SRE so that memory access tothe defect area may take a detour to the spare area.

Although the present invention has been described above with referenceto embodiments shown in the drawings to aid in understanding the presentinvention, the embodiments are merely examples, and those of ordinaryskill in the art would understand that various modifications andequivalents can be made from the embodiments. Therefore, the technicalscope of the present invention should be determined by the followingclaims.

The invention claimed is:
 1. A spin transfer torque magnetic randomaccess memory (STT-MRAM) device comprising: an STT-MRAM memory arrayincluding a data storage unit configured to store data, a defect areaaddress storage unit configured to store a defect area address, and aspare area configured to store data of a defect area; and a bypassdetermination unit including a volatile information storage elementconfigured to store the defect area address, which is stored in thedefect area address storage unit and provided, and configured tocompare, when memory array access occurs, an access address with thedefect area address stored in the volatile information storage elementand cause the memory array access to take a detour to the spare area,wherein the bypass determination unit comprises: a volatile informationstorage element configured to store bit information of the defect areaaddress; an address comparison unit configured to receive the bitinformation stored in the volatile information storage element and bitinformation of the access address, and perform a logic operation ofdetermining whether pieces of the received bit information coincide witheach other; and a spare area activation unit configured to receive alogic operation result of the address comparison unit and activate thespare area.
 2. The STT-MRAM device of claim 1, wherein the bypassdetermination unit further comprises an activation flag capacitorconfigured to store an activation flag bit; and activation of the bypassdetermination unit is controlled by the activation flag bit stored inthe activation flag capacitor.
 3. The STT-MRAM device of claim 1,wherein when the device is booted up or reset, the defect area addressstored in the defect area address storage unit is provided to thevolatile information storage element and stored therein.
 4. The STT-MRAMdevice of claim 3, wherein when the device is booted up or reset, adeactivation signal for deactivating the bypass determination unit isprovided to the bypass determination unit.
 5. The STT-MRAM device ofclaim 1, wherein the memory array has a 2-transistor 2-magnetic tunneljunction (MTJ) (2T2M) structure for storing two pieces of datacomplementary to each other.
 6. The STT-MRAM device of claim 1, whereinthe memory array has a 1-transistor 1-magnetic tunnel junction (MTJ)(1T1M) structure for storing single-bit data.
 7. The STT-MRAM device ofclaim 1, further comprising: a sense amplifier configured to read thedata stored in the memory array; and a driver configured to provide anelectrical signal for reading information stored in the memory array orwriting information in the memory array.
 8. A circuit for bypassing adefect area of a STT-MRAM, the circuit comprising: address storagecapacitors configured to store respective bits of a defect area address;address comparison units having one end to which one bit of an accessaddress is provided and the other end to which one bit stored in theaddress storage capacitors is provided and configured to perform anaddress comparison logic operation; and an address coincidence logicoperation unit configured to receive output signals of the addresscomparison units and determine whether the access address coincides withthe defect area address, wherein when the access address coincides withthe defect area address, the address coincidence logic operation unitactivates a spare area and causes access to the defect area address totake a detour to the activated spare area.
 9. The circuit of claim 8,further comprising an activation capacitor configured to store anactivation bit, wherein activation of the circuit is controlled by theactivation bit stored in the activation capacitor.
 10. The circuit ofclaim 8, wherein the address comparison units are logic gates whichprovide activation signals when signals provided as inputs are identicalto each other.
 11. The circuit of claim 10, wherein when the activationsignals provided by the address comparison units coincide with eachother, the address coincidence logic operation unit activates the sparearea and causes access to the defect area address to take a detour tothe activated spare area.
 12. A spin transfer torque magnetic randomaccess memory (STT-MRAM) device comprising: an STT-MRAM memory arrayincluding a data storage unit configured to store data, a defect areaaddress storage unit configured to store a defect area address, and aspare area configured to store data of a defect area; and a bypassdetermination unit including a volatile information storage elementconfigured to store the defect area address, which is stored in thedefect area address storage unit and provided, and configured tocompare, when memory array access occurs, an access address with thedefect area address stored in the volatile information storage elementand cause the memory array access to take a detour to the spare area,wherein when the device is booted up or reset, the defect area addressstored in the defect area address storage unit is provided to thevolatile information storage element and stored therein, and adeactivation signal for deactivating the bypass determination unit isprovided to the bypass determination unit.